Product Summary

The H15R1202 is a reverse conducting IGBT with monolithic body diode. The applications of H15R1202 are: (1)Inductive Cooking; (2)Soft Switching Applications.

Parametrics

H15R1202 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current: 30A; (3)Pulsed collector current, tp limited by Tjmax ICpuls: 45A; (4)Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175℃): 45A; (5)Diode forward current: 30A; (6)Diode pulsed current, tp limited by Tjmax IFpuls: 45A; (7)Gate-emitter voltage: ±20V; (8)Transient Gate-emitter voltage (tp < 5 ms): ±25V; (9)Power dissipation TC = 25℃ Ptot: 357 W; (10)Operating junction temperature Tj: -40 to +175℃; (11)Storage temperature Tstg: -55 to +175℃; (12)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃; (13)Mounting Torque Ms: 0.6 Nm.

Features

H15R1202 features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution; - high ruggedness, temperature stable behavior; (4)Low EMI; (5)Qualified according to JEDEC1 for target applications; (6)Pb-free lead plating; RoHS compliant; (7)Complete product spectrum and PSpice Models.

Diagrams

H15R1202 diagram