Product Summary

The IRF644PBF is a Power MOSFET from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF644PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF644PBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 250V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current VGS at 10 V ID TC = 25 ℃: 14A; TC = 100 ℃: 8.5 A; (4)Pulsed Drain Currenta IDM: 56A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energyb EAS: 550 mJ; (7)Repetitive Avalanche Currenta IAR: 14 A; (8)Repetitive Avalanche Energya EAR: 13 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 125 W; (10)Peak Diode Recovery dV/dtc dV/dt: 4.8 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 ℃; (12)Soldering Recommendations (Peak Temperature) for 10 s 300 ℃.

Features

IRF644PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.

Diagrams

IRF644PBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF644PBF
IRF644PBF

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Data Sheet

0-1: $0.83
1-10: $0.66
10-100: $0.58
100-250: $0.50
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Data Sheet

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