(China (Mainland))
Product Summary
The AO8810 is a common-drain dual N-channel enhancement mode field effect transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. The AO8810 is suitable for use as a load switch or in PWM applications. It is ESD protected. The device is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). The AO8810 is electrically identical.
Parametrics
AO8810 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: ±8V; (3)Continuous Drain Current ID: 7A at TA=25℃; 5.7A at TA=70℃; (4)Pulsed Drain Current IDM: 30A; (5)Power Dissipation PD: 1.5W at TA=25℃; 1W at TA=70℃; (6)Junction and Storage Temperature Range TJ, TSTG: -55 to 150℃.
Features
AO8810 features: (1)VDS (V) = 20V; (2)ID = 7 A (VGS = 4.5V); (3)RDS(ON) < 20mΩ (VGS = 4.5V); (4)RDS(ON) < 24mΩ (VGS = 2.5V); (5)RDS(ON) < 32mΩ (VGS = 1.8V); (6)ESD Rating: 2000V HBM.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 AO8810 |
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MOSFET DUAL N-CH 20V 7A 8-TSSOP |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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AO8800 |
Other |
|
Data Sheet |
Negotiable |
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AO8801 |
Other |
|
Data Sheet |
Negotiable |
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AO8802 |
Other |
|
Data Sheet |
Negotiable |
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AO8803 |
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MOSFET DUAL P-CH -12V -7A 8TSSOP |
Data Sheet |
Negotiable |
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AO8804 |
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MOSFET 2N-CH 20V 8A 8TSSOP |
Data Sheet |
|
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AO8806 |
Other |
|
Data Sheet |
Negotiable |
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