Product Summary

The AO8810 is a common-drain dual N-channel enhancement mode field effect transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. The AO8810 is suitable for use as a load switch or in PWM applications. It is ESD protected. The device is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). The AO8810 is electrically identical.

Parametrics

AO8810 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: ±8V; (3)Continuous Drain Current ID: 7A at TA=25℃; 5.7A at TA=70℃; (4)Pulsed Drain Current IDM: 30A; (5)Power Dissipation PD: 1.5W at TA=25℃; 1W at TA=70℃; (6)Junction and Storage Temperature Range TJ, TSTG: -55 to 150℃.

Features

AO8810 features: (1)VDS (V) = 20V; (2)ID = 7 A (VGS = 4.5V); (3)RDS(ON) < 20mΩ (VGS = 4.5V); (4)RDS(ON) < 24mΩ (VGS = 2.5V); (5)RDS(ON) < 32mΩ (VGS = 1.8V); (6)ESD Rating: 2000V HBM.

Diagrams

AO8810 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO8810
AO8810

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Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO8810
AO8810

MOSFET DUAL N-CH 20V 7A 8-TSSOP
Data Sheet
Negotiable 
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1-25: $0.31
25-100: $0.26
100-250: $0.23
250-500: $0.19
500-1000: $0.15
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